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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/1212.3394 |
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| _version_ | 1866908684636913664 |
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| author | Guo, Huaihong Yang, Teng Tao, Peng Zhang, Zhidong |
| author_facet | Guo, Huaihong Yang, Teng Tao, Peng Zhang, Zhidong |
| contents | We systematically study thermoelectric properties of layered MoS$_2$ by doping, based on Boltzmann transport theory and first-principles calculations. We obtain optimal doping region (around 10$^{19}$ cm$^{-3}$) by looking closely to the temperature and doping level dependent thermopower, electrical conductivity, power factor (PF) and ultimately figure of merit (ZT) coefficient along in-plane and cross-plane directions. MoS$_2$ has a vanishingly small anisotropy of thermopower but a big anisotropy of electrical conductivity and electronic thermal conductivity in optimal doping region. $κ_e$ is comparable to $κ_l$ in the plane while $κ_l$ dominates over $κ_e$ across the plane. ZT can reach as high as 0.3 at around 700 K. In-plane direction is demonstrated to be more preferable for thermoelectric applications of MoS$_2$ by doping. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1212_3394 |
| institution | arXiv |
| publishDate | 2012 |
| record_format | arxiv |
| spellingShingle | Doping effect on thermoelectric properties of MoS$_2$ Guo, Huaihong Yang, Teng Tao, Peng Zhang, Zhidong Materials Science We systematically study thermoelectric properties of layered MoS$_2$ by doping, based on Boltzmann transport theory and first-principles calculations. We obtain optimal doping region (around 10$^{19}$ cm$^{-3}$) by looking closely to the temperature and doping level dependent thermopower, electrical conductivity, power factor (PF) and ultimately figure of merit (ZT) coefficient along in-plane and cross-plane directions. MoS$_2$ has a vanishingly small anisotropy of thermopower but a big anisotropy of electrical conductivity and electronic thermal conductivity in optimal doping region. $κ_e$ is comparable to $κ_l$ in the plane while $κ_l$ dominates over $κ_e$ across the plane. ZT can reach as high as 0.3 at around 700 K. In-plane direction is demonstrated to be more preferable for thermoelectric applications of MoS$_2$ by doping. |
| title | Doping effect on thermoelectric properties of MoS$_2$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/1212.3394 |