Ítems similars

• Ab initio simulation of $\mathrm{Ta_2O_5}$: A high symmetry ground state phase with application to interface calculation
  per: Yuan, Jun-Hui, et al.
  Publicat: (2018)
• Planar penta-transition metal phosphide and arsenide as narrow-bandgap semiconductors from first principle calculations
  per: Yuan, Jun-Hui, et al.
  Publicat: (2018)
• $\mathrm{BaAs_3}$: A narrow gap 2D semiconductor with vacancy-induced semiconductor-metal transition
  per: Tang, Ping, et al.
  Publicat: (2019)
• The occupation dependent DFT-1/2 method
  per: Yang, Shengxin, et al.
  Publicat: (2025)
• $\mathrm{TlP_5}$: An unexplored direct band gap 2D semiconductor with ultra-high carrier mobility
  per: Yuan, Jun-Hui, et al.
  Publicat: (2018)