Ítems similars

• Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
  per: Wolff, Niklas, et al.
  Publicat: (2025)
• Interfacial Polarization Switching in Al 0.92 Sc 0.08 N/GaN Heterostructures Grown by Sputter Epitaxy
  per: Niklas Wolff, et al.
  Publicat: (2025)
• Wafer scale reactive sputtering of highly oriented and ferroelectric Al$_{0.6}$Sc$_{0.4}$N from 300 mm AlSc Targets
  per: Kreutzer, Tom-Niklas, et al.
  Publicat: (2025)
• Al 1‐x Sc x N‐Based Ferroelectric Domain‐Wall Memristors
  per: Haidong Lu, et al.
  Publicat: (2025)
• Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
  per: Islam, Md Redwanul, et al.
  Publicat: (2024)