Ngā tūemi rite

• Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface
  mā: Funaki, Nahoto, me ētahi atu.
  I whakaputaina: (2025)
• Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation
  mā: Tsunasaki, Mukai, me ētahi atu.
  I whakaputaina: (2022)
• Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps
  mā: Uemoto, Mitsuharu, me ētahi atu.
  I whakaputaina: (2023)
• Theoretical investigation of interface atomic structure of graphene on NiFe alloy substrate
  mā: Matsumoto, Naohiro, me ētahi atu.
  I whakaputaina: (2025)
• Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
  mā: Fiorenza, Patrick, me ētahi atu.
  I whakaputaina: (2024)