Ngā tūemi rite

• Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
  mā: Date, Mihir, me ētahi atu.
  I whakaputaina: (2017)
• Numerical Investigation of Quasi‐Vertical GaN‐on‐Si MOSFET Incorporating AlGaN/GaN Polarization Interface and AlGaN Functional Layer
  mā: Zijun Lin, me ētahi atu.
  I whakaputaina: (2026)
• Cathodoluminescence of quantized energy states at AlGaN/GaN interface
  mā: Chahshouri, Fatemeh, me ētahi atu.
  I whakaputaina: (2024)
• Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
  mā: Dub, M., me ētahi atu.
  I whakaputaina: (2025)
• Schottky Contact Degradation and Dislocations in AlGaN‐GaN HEMTs
  mā: Yongkun Sin, me ētahi atu.
  I whakaputaina: (2025)