Antzeko izenburuak

• Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing
  nork: Kang, Jingxuan, et al.
  Argitaratua: (2025)
• Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
  nork: Kang, Jingxuan, et al.
  Argitaratua: (2024)
• Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
  nork: John, Philipp, et al.
  Argitaratua: (2023)
• ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
  nork: John, Philipp, et al.
  Argitaratua: (2024)
• Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles
  nork: Fernández-Garrido, Sergio, et al.
  Argitaratua: (2024)