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| Autors principals: | , , , , , , , |
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| Format: | Preprint |
| Publicat: |
2024
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| Matèries: | |
| Accés en línia: | https://arxiv.org/abs/2403.14568 |
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| _version_ | 1866911807469256704 |
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| author | Mariappan, Sathiskumar Bhoi, Dilip Joseph, Boby Singh, R. P. Lingannan, Govindaraj Srihari, Velaga Sonachalam, Arumugam Uwatoko, Yoshiya |
| author_facet | Mariappan, Sathiskumar Bhoi, Dilip Joseph, Boby Singh, R. P. Lingannan, Govindaraj Srihari, Velaga Sonachalam, Arumugam Uwatoko, Yoshiya |
| contents | We report a pressure-induced enhancement of the superconducting transition temperature (Tc) in a non-centrosymmetric (NCS) compound, LaPtGe. With pressure, till 3 GPa, we observed a modest enhancement of the Tc with a rate of 0.071 K/GPa. However, above this pressure, the rate showed a ~2.5 times increase, 0.183 K/GPa. We observed a Tc of 3.94 K at 6 GPa, the highest pressure value used in our transport study. Synchrotron high-pressure x-ray powder diffraction (HP-XRPD) measurements do not reveal any structural phase transition in this system in this pressure range. However, it showed an apparent change of slope in the pressure dependence of lattice parameters above and below 3 GPa. Pressure dependence of the unit-cell volume also followed a distinct trend below and above 3 GPa, with the Birch-Murnaghan equation of state fit providing a bulk modulus (B0) value of ~144 and ~162 GPa, respectively, for two pressure regions. Further, the magnetotransport measurement under pressure up to 2.45 GPa reveals the enhancement of the upper critical field (Hc2(0)) from 0.7 T (0 GPa) to 0.92 T (2.45 GPa). In addition, the upward curvature in Hc2(T) becomes stronger with increasing pressure, suggesting a change of the underlying Fermi surface topology with pressure. The signature for the inducible Hc2(T) with pressure, the distinct enhancement of Tc around 3 GPa, and the noticeable change in lattice parameters around 3 GPa suggests the possibility of multi-gap superconductivity in LaPtGe similar to identical structure NCS compound, LaPtSi. The enhancement of Tc by pressure can be correlated with the possible underlying lattice modulation by compression and the change in the density of states at the Fermi level. Also, the bare change in pressure-dependent activation energy U0 up to 2.45 GPa calculated using the Arrhenius relation clearly shows that the shift in Tc does not arise from grain boundaries. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_14568 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Pressure-induced enhancement of superconductivity in a non-centrosymmetric compound LaPtGe Mariappan, Sathiskumar Bhoi, Dilip Joseph, Boby Singh, R. P. Lingannan, Govindaraj Srihari, Velaga Sonachalam, Arumugam Uwatoko, Yoshiya Superconductivity We report a pressure-induced enhancement of the superconducting transition temperature (Tc) in a non-centrosymmetric (NCS) compound, LaPtGe. With pressure, till 3 GPa, we observed a modest enhancement of the Tc with a rate of 0.071 K/GPa. However, above this pressure, the rate showed a ~2.5 times increase, 0.183 K/GPa. We observed a Tc of 3.94 K at 6 GPa, the highest pressure value used in our transport study. Synchrotron high-pressure x-ray powder diffraction (HP-XRPD) measurements do not reveal any structural phase transition in this system in this pressure range. However, it showed an apparent change of slope in the pressure dependence of lattice parameters above and below 3 GPa. Pressure dependence of the unit-cell volume also followed a distinct trend below and above 3 GPa, with the Birch-Murnaghan equation of state fit providing a bulk modulus (B0) value of ~144 and ~162 GPa, respectively, for two pressure regions. Further, the magnetotransport measurement under pressure up to 2.45 GPa reveals the enhancement of the upper critical field (Hc2(0)) from 0.7 T (0 GPa) to 0.92 T (2.45 GPa). In addition, the upward curvature in Hc2(T) becomes stronger with increasing pressure, suggesting a change of the underlying Fermi surface topology with pressure. The signature for the inducible Hc2(T) with pressure, the distinct enhancement of Tc around 3 GPa, and the noticeable change in lattice parameters around 3 GPa suggests the possibility of multi-gap superconductivity in LaPtGe similar to identical structure NCS compound, LaPtSi. The enhancement of Tc by pressure can be correlated with the possible underlying lattice modulation by compression and the change in the density of states at the Fermi level. Also, the bare change in pressure-dependent activation energy U0 up to 2.45 GPa calculated using the Arrhenius relation clearly shows that the shift in Tc does not arise from grain boundaries. |
| title | Pressure-induced enhancement of superconductivity in a non-centrosymmetric compound LaPtGe |
| topic | Superconductivity |
| url | https://arxiv.org/abs/2403.14568 |