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| Автори: | , , , , , , |
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| Формат: | Preprint |
| Опубліковано: |
2024
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| Предмети: | |
| Онлайн доступ: | https://arxiv.org/abs/2405.08321 |
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| _version_ | 1866917048464965632 |
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| author | Nishimura, Ryutaro Kishimoto, Shunji Sasaki, Toshihiko Mitsui, Shingo Shinya, Masayoshi Arai, Yasuo Miyoshi, Toshinobu |
| author_facet | Nishimura, Ryutaro Kishimoto, Shunji Sasaki, Toshihiko Mitsui, Shingo Shinya, Masayoshi Arai, Yasuo Miyoshi, Toshinobu |
| contents | Residual stress is an important factor governing evaluating and controlling the quality of metal materials in industrial products. X-ray measurements provide one of the most effective means of evaluating residual stress without destruction. In such measurements, the effects of residual stress on the crystal structure can be observed through the Debye ring deformation.
In previous studies, we developed a residual stress measurement system based on the $cos α$ method, using a two-dimensional (2D) silicon-on-insulator pixel (SOIPIX) detector known as INTPIX4. In a typical laboratory setup, this system requires only 1 second to measure a specified point. This is drastically faster than the conventional system based on the $sin^{2} ψ$ method, which requires more than 10 min, and the $cos α$-based system using an imaging plate, which requires 1 min. Compared to other systems, it can evaluate the 2D distribution of residual stress faster and provide more detailed information for evaluating materials. We first attempted to measure the 2D distribution in a laboratory setup with a Cr X-ray tube (Cr K$α$ 5.4 keV) and obtained satisfactory results. We subsequently took measurements using synchrotron monochromatic X-rays to determine the fine accuracy and fine sampling pitch distribution. In this paper, we report the results of the initial synchrotron experiment, including the residual stress distribution of the standard specimen obtained by the first prototype setup. Furthermore, we compare the synchrotron measurements with those from the laboratory. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_08321 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Fine residual stress distribution measurement of steel materials by SOI pixel detector with synchrotron X-rays Nishimura, Ryutaro Kishimoto, Shunji Sasaki, Toshihiko Mitsui, Shingo Shinya, Masayoshi Arai, Yasuo Miyoshi, Toshinobu Instrumentation and Detectors Residual stress is an important factor governing evaluating and controlling the quality of metal materials in industrial products. X-ray measurements provide one of the most effective means of evaluating residual stress without destruction. In such measurements, the effects of residual stress on the crystal structure can be observed through the Debye ring deformation. In previous studies, we developed a residual stress measurement system based on the $cos α$ method, using a two-dimensional (2D) silicon-on-insulator pixel (SOIPIX) detector known as INTPIX4. In a typical laboratory setup, this system requires only 1 second to measure a specified point. This is drastically faster than the conventional system based on the $sin^{2} ψ$ method, which requires more than 10 min, and the $cos α$-based system using an imaging plate, which requires 1 min. Compared to other systems, it can evaluate the 2D distribution of residual stress faster and provide more detailed information for evaluating materials. We first attempted to measure the 2D distribution in a laboratory setup with a Cr X-ray tube (Cr K$α$ 5.4 keV) and obtained satisfactory results. We subsequently took measurements using synchrotron monochromatic X-rays to determine the fine accuracy and fine sampling pitch distribution. In this paper, we report the results of the initial synchrotron experiment, including the residual stress distribution of the standard specimen obtained by the first prototype setup. Furthermore, we compare the synchrotron measurements with those from the laboratory. |
| title | Fine residual stress distribution measurement of steel materials by SOI pixel detector with synchrotron X-rays |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2405.08321 |