Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , , , , , , |
|---|---|
| Μορφή: | Preprint |
| Έκδοση: |
2024
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| Θέματα: | |
| Διαθέσιμο Online: | https://arxiv.org/abs/2406.09607 |
| Ετικέτες: |
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Πίνακας περιεχομένων:
- In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungated conditions. Our samples are likely free from strong localization effects and significant granularity, as indicated by $( k_{f l} \gg 1 )$, suggesting that the primary determinant of the transition temperature in InN is carrier density, rather than disorder scattering. The observed behavior is consistent with BCS s-wave superconductivity, corroborated by the superconducting parameters we measured. Furthermore, we observed a $60$% bipolar suppression of the supercurrent in our experiments.