Ngā tūemi rite

• In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium
  mā: Das, Nabasindhu, me ētahi atu.
  I whakaputaina: (2024)
• Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension
  mā: Gilankar, Advait, me ētahi atu.
  I whakaputaina: (2025)
• Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
  mā: Hamid, Md Abdul, me ētahi atu.
  I whakaputaina: (2026)
• Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2
  mā: Das, Nabasindhu, me ētahi atu.
  I whakaputaina: (2025)
• NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
  mā: Liu, Yizheng, me ētahi atu.
  I whakaputaina: (2024)