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| Format: | Preprint |
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2024
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| Online pristup: | https://arxiv.org/abs/2410.16913 |
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| author | Huckemann, Till Muster, Pascal Langheinrich, Wolfram Brackmann, Varvara Friedrich, Michael Komerički, Nikola D. Diebel, Laura K. Stieß, Verena Bougeard, Dominique Yamamoto, Yuji Reichmann, Felix Zöllner, Marvin H. Dahl, Claus Schreiber, Lars R. Bluhm, Hendrik |
| author_facet | Huckemann, Till Muster, Pascal Langheinrich, Wolfram Brackmann, Varvara Friedrich, Michael Komerički, Nikola D. Diebel, Laura K. Stieß, Verena Bougeard, Dominique Yamamoto, Yuji Reichmann, Felix Zöllner, Marvin H. Dahl, Claus Schreiber, Lars R. Bluhm, Hendrik |
| contents | This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal budget. The devices exhibit state-of-the-art charge sensing, charge noise and valley splitting characteristics, showing that industrial fabrication is not harming the heterostructure quality. These measured parameters are all correlated to spin qubit coherence and qubit gate fidelity. We describe the single electron device layout, design and its fabrication process using electron beam lithography. The incorporated standard 90 nm back-end of line flow for gate-layer independent contacting and wiring can be scaled up to multiple wiring layers for scalable quantum computing architectures. In addition, we present millikelvin characterization results. Our work exemplifies the potential of industrial fabrication methods to harness the inherent CMOS-compatibility of the Si/Si-Ge material system, despite being restricted to a reduced thermal budget. It paves the way for advanced quantum processor architectures with high yield and device quality. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_16913 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures Huckemann, Till Muster, Pascal Langheinrich, Wolfram Brackmann, Varvara Friedrich, Michael Komerički, Nikola D. Diebel, Laura K. Stieß, Verena Bougeard, Dominique Yamamoto, Yuji Reichmann, Felix Zöllner, Marvin H. Dahl, Claus Schreiber, Lars R. Bluhm, Hendrik Mesoscale and Nanoscale Physics Quantum Physics This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal budget. The devices exhibit state-of-the-art charge sensing, charge noise and valley splitting characteristics, showing that industrial fabrication is not harming the heterostructure quality. These measured parameters are all correlated to spin qubit coherence and qubit gate fidelity. We describe the single electron device layout, design and its fabrication process using electron beam lithography. The incorporated standard 90 nm back-end of line flow for gate-layer independent contacting and wiring can be scaled up to multiple wiring layers for scalable quantum computing architectures. In addition, we present millikelvin characterization results. Our work exemplifies the potential of industrial fabrication methods to harness the inherent CMOS-compatibility of the Si/Si-Ge material system, despite being restricted to a reduced thermal budget. It paves the way for advanced quantum processor architectures with high yield and device quality. |
| title | Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2410.16913 |