সংরক্ষণ করুন:
| প্রধান লেখক: | , , |
|---|---|
| বিন্যাস: | Preprint |
| প্রকাশিত: |
2024
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://arxiv.org/abs/2411.14101 |
| ট্যাগগুলো: |
ট্যাগ যুক্ত করুন
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সূচিপত্রের সারণি:
- Dielectric metasurfaces operating at quasi-bound states in the continuum (qBICs) can achieve exceptionally high radiative quality ($\textit{Q}$) factors by introducing small asymmetries into their unit cells. However, fabrication imperfections often impose major limitations on the experimentally observed $\textit{Q}$ factors. In this study, we experimentally demonstrate BIC metasurfaces with a record-high $\textit{Q}$ factor of 101,486 under normal excitation of light in the telecom wavelength range achieved by employing low-contrast silicon pairs. Our findings show that such ultrahigh-$\textit{Q}$ factors can be attained by leveraging both the high radiative $\textit{Q}$ factors of higher-order qBIC modes and reduced scattering losses in shallow-etched designs. Additionally, we demonstrate stable sub-picometer-level wavelength fluctuations in water, with a limit of detection of $10^{-5}$ for environmental refractive index changes. The proposed approach can be extended to BIC metasurfaces with many other configurations and operating wavelengths for ultrahigh-$\textit{Q}$ applications in both fundamental physics and advanced devices.