Saved in:
Bibliographic Details
Main Authors: de Lima, Felipe Crasto, Miwa, Roberto H., Lewenkopf, Caio, Fazzio, Adalberto
Format: Preprint
Published: 2024
Subjects:
Online Access:https://arxiv.org/abs/2412.08607
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866909615477751808
author de Lima, Felipe Crasto
Miwa, Roberto H.
Lewenkopf, Caio
Fazzio, Adalberto
author_facet de Lima, Felipe Crasto
Miwa, Roberto H.
Lewenkopf, Caio
Fazzio, Adalberto
contents We investigate the robustness of {\it virtual} topological states -- topological phases away from the Fermi energy -- against the electron-electron interaction and band filling. As a case study, we employ a realistic model to investigate the properties of vacancy-driven topological phases in transition metal dichalcogenides (TMDs) and establish a connection between the degree of localization of topological wave functions, the vacancy density, and the electron-electron interaction strength with the topological phase robustness. We demonstrate that electron-electron interactions play a crucial role in degrading topological phases thereby determining the validity of single-particle approximations for topological insulator phases. Our findings can be naturally extended to {\it virtual} topological phases of a wide range of materials.
format Preprint
id arxiv_https___arxiv_org_abs_2412_08607
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Interacting Virtual Topological Phases in Defect-Rich 2D Materials
de Lima, Felipe Crasto
Miwa, Roberto H.
Lewenkopf, Caio
Fazzio, Adalberto
Materials Science
We investigate the robustness of {\it virtual} topological states -- topological phases away from the Fermi energy -- against the electron-electron interaction and band filling. As a case study, we employ a realistic model to investigate the properties of vacancy-driven topological phases in transition metal dichalcogenides (TMDs) and establish a connection between the degree of localization of topological wave functions, the vacancy density, and the electron-electron interaction strength with the topological phase robustness. We demonstrate that electron-electron interactions play a crucial role in degrading topological phases thereby determining the validity of single-particle approximations for topological insulator phases. Our findings can be naturally extended to {\it virtual} topological phases of a wide range of materials.
title Interacting Virtual Topological Phases in Defect-Rich 2D Materials
topic Materials Science
url https://arxiv.org/abs/2412.08607