Guardado en:
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2502.02521 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866912976813948928 |
|---|---|
| author | Van Osch, Benjamin Paurevic, Andrija Sakr, Ali Joshi, Tanmay van der Bovenkamp, Dennis Nicolau, Quim T. Zwanenburg, Floris A. Baugh, Jonathan |
| author_facet | Van Osch, Benjamin Paurevic, Andrija Sakr, Ali Joshi, Tanmay van der Bovenkamp, Dennis Nicolau, Quim T. Zwanenburg, Floris A. Baugh, Jonathan |
| contents | We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown, identifies a working point in barrier-gate space, and selects and ranks charge-sensing operating points. It further automates the acquisition and analysis of Coulomb diamonds to extract sensor-relevant parameters, including lever arm, charging energy, gate and source/drain capacitances, and estimated dot radius. We demonstrate the protocol on accumulation-mode silicon MOS SET and SHT devices operated at 1.5 K and $\approx 50$ mK, respectively, establishing ambipolar applicability across a wide temperature range. Operation at 1.5 K indicates that charge sensing in compact MOS devices is feasible in the 1-2 K regime, supporting higher-temperature readout relevant to scalable spin-qubit architectures. Compared to manual tuning, automation reduces operator overhead and provides consistent device characterization, with clear pathways for further speedups and improved robustness via faster electronics and feedback-based stabilization. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_02521 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Automated tuning and characterization of single-electron and single-hole transistor charge sensors Van Osch, Benjamin Paurevic, Andrija Sakr, Ali Joshi, Tanmay van der Bovenkamp, Dennis Nicolau, Quim T. Zwanenburg, Floris A. Baugh, Jonathan Mesoscale and Nanoscale Physics Quantum Physics We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown, identifies a working point in barrier-gate space, and selects and ranks charge-sensing operating points. It further automates the acquisition and analysis of Coulomb diamonds to extract sensor-relevant parameters, including lever arm, charging energy, gate and source/drain capacitances, and estimated dot radius. We demonstrate the protocol on accumulation-mode silicon MOS SET and SHT devices operated at 1.5 K and $\approx 50$ mK, respectively, establishing ambipolar applicability across a wide temperature range. Operation at 1.5 K indicates that charge sensing in compact MOS devices is feasible in the 1-2 K regime, supporting higher-temperature readout relevant to scalable spin-qubit architectures. Compared to manual tuning, automation reduces operator overhead and provides consistent device characterization, with clear pathways for further speedups and improved robustness via faster electronics and feedback-based stabilization. |
| title | Automated tuning and characterization of single-electron and single-hole transistor charge sensors |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2502.02521 |