Podobne zapisy

• Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma
  od: Catherall, David, i wsp.
  Wydane: (2024)
• Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H$_2$ and SF$_6$ plasmas
  od: Chen, Ivy I., i wsp.
  Wydane: (2023)
• Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas
  od: Bayrak, Mete M., i wsp.
  Wydane: (2025)
• Atomic layer etching of SiO$_2$ using sequential SF$_6$ gas and Ar plasma
  od: Peng, Jun, i wsp.
  Wydane: (2024)
• Laser induced surface nitriding of niobium: phase evolution and superconducting behaviour
  od: Frechilla, J., i wsp.
  Wydane: (2026)