कवर छवि

में बचाया:
ग्रंथसूची विवरण
मुख्य लेखकों: Molnar, A., Zhao, Y., Mazza, S. M., Oregan, G., Davis, M., Beringer, S., Tiernan, A., Ott, J., Sadrozinski, H. F. -W., Seiden, A., Schumm, B., McKinney-Martinez, F., Bisht, A., Centis-Vignali, M., Paternoster, G., Boscardin, M.
स्वरूप: Preprint
प्रकाशित: 2025
विषय:
Instrumentation and Detectors
High Energy Physics - Experiment
ऑनलाइन पहुंच:https://arxiv.org/abs/2504.18638
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विषय - सूची:
  • The response of Low Gain Avalanche Diodes (LGADs), a type of thin silicon detector with internal gain, to X-rays of energies between 6-16~keV was characterized at the Stanford Synchrotron Radiation Lightsource (SSRL). The utilized beamline at SSRL was 7-2, with a nominal beam size of 30~$μ$m, repetition rate of 500~MHz, and with an energy dispersion $ΔE/E$ of $10^{-4}$. Multi-channel LGADs, AC-LGADs, and TI-LGADs of different thicknesses and gain layer configurations from Hamamatsu Photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested. The sensors were read out with a discrete component board and digitized with a fast oscilloscope or a CAEN fast digitizer. The devices' energy response, energy resolution, and time resolution were measured as a function of X-ray energy and position. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.

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