Shranjeno v:
| Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Izdano: |
2025
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| Teme: | |
| Online dostop: | https://arxiv.org/abs/2506.04776 |
| Oznake: |
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Kazalo:
- Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies facilitate depletion of the charge sensitive volume. TJ-Monopix2 and LF-Monopix2 are the most recent large-scale chips in their respective development line, aiming for the ATLAS Inner Tracker outer layer requirements. Those include a tolerance to ionizing radiation of up to 100$\,$Mrad. It was evaluated by irradiating both devices with X-rays to the corresponding ionization dose, showing no significant degradation of the performance at 100$\,$Mrad and continuous operability throughout the irradiation campaign.