Gorde:
| Egile Nagusiak: | , , , , |
|---|---|
| Formatua: | Preprint |
| Argitaratua: |
2025
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| Gaiak: | |
| Sarrera elektronikoa: | https://arxiv.org/abs/2506.19749 |
| Etiketak: |
Etiketa erantsi
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Aurkibidea:
- The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer. Atomic layer etching (ALE) has the potential to overcome this challenge because of its ability to etch with Angstrom-scale precision, low damage, and intrinsic wafer-scale uniformity. Here, we report an ALE process for InGaAs based on sequential atomic hydrogen and oxygen gas exposures. An etch rate of 0.095 Å/cycle was observed at 350 °C using ex-situ spectroscopic ellipsometry. The sample remains atomically smooth after 200 cycles of ALE. This process could be employed as a gate recess etch step in InP HEMT fabrication to improve microwave performance and yield.