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Zenodo
2026
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| Online adgang: | https://doi.org/10.1063/5.0326525 |
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| _version_ | 1866901904402939904 |
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| author | Pollefliet, Bert Porret, Clement Everaert, Jean-Luc Sankaran, Kiroubanand Richard, Olivier Han, Han Loo, Roger Detavernier, Christophe Vantomme, André Merckling, Clement |
| author_facet | Pollefliet, Bert Porret, Clement Everaert, Jean-Luc Sankaran, Kiroubanand Richard, Olivier Han, Han Loo, Roger Detavernier, Christophe Vantomme, André Merckling, Clement |
| contents | <p>Scandium-based silicides have attracted attention as new contact materials for ultimately scaled CMOS devices. Excellent<br>contact properties in combination with P-doped Si have been demonstrated. However, as opposed to the conventional<br>Ti, Co and Ni silicides, little is known about the formation mechanisms and properties of Sc silicides. This<br>manuscript therefore reports on the formation and structural properties of orthorhombic ScSi silicide formed by solid<br>state reaction between a sputter deposited 15 nm Sc film and a Si(001) substrate. Synchrotron X-ray diffraction (XRD)<br>pole figures, in combination with cross section transmission electron microscopy, are leveraged to determine the texture<br>of ScSi. An epitaxial texture with two different components is evidenced. Large (≳ 20 nm) grains, having a minimal<br>defectivity originating from the lattice mismatch between the silicide and the substrate, are distinguished from small<br>(≲ 5 nm) nanotwinned grains. The formation of these two sets of grains is investigated by in situ XRD. Due to a solid<br>state amorphization reaction between Sc and Si, the formation of orthorhombic ScSi is preceded by the formation of an<br>amorphous ScSi phase. Orthorhombic ScSi formation is initiated at ~320°C by the crystallization of small nuclei at the<br>interface with Si, as evidenced for the first time by cross sectional transmission electron microscopy. These nuclei share<br>a singular epitaxial orientation, corresponding to the one of the large grains in the final ScSi film. Further crystallization<br>occurs anisotropically in the lateral direction. Along the c-axis, the initial epitaxial orientation is maintained. However,<br>along the a-axis, twin defects are generated, resulting in the small grain size.</p> |
| format | Recurso digital |
| id | zenodo_https___doi_org_10_1063_5_0326525 |
| institution | Zenodo |
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| publishDate | 2026 |
| publisher | Zenodo |
| record_format | zenodo |
| spellingShingle | Anisotropic crystallization of orthorhombic ScSi on Si(001) substrates Pollefliet, Bert Porret, Clement Everaert, Jean-Luc Sankaran, Kiroubanand Richard, Olivier Han, Han Loo, Roger Detavernier, Christophe Vantomme, André Merckling, Clement <p>Scandium-based silicides have attracted attention as new contact materials for ultimately scaled CMOS devices. Excellent<br>contact properties in combination with P-doped Si have been demonstrated. However, as opposed to the conventional<br>Ti, Co and Ni silicides, little is known about the formation mechanisms and properties of Sc silicides. This<br>manuscript therefore reports on the formation and structural properties of orthorhombic ScSi silicide formed by solid<br>state reaction between a sputter deposited 15 nm Sc film and a Si(001) substrate. Synchrotron X-ray diffraction (XRD)<br>pole figures, in combination with cross section transmission electron microscopy, are leveraged to determine the texture<br>of ScSi. An epitaxial texture with two different components is evidenced. Large (≳ 20 nm) grains, having a minimal<br>defectivity originating from the lattice mismatch between the silicide and the substrate, are distinguished from small<br>(≲ 5 nm) nanotwinned grains. The formation of these two sets of grains is investigated by in situ XRD. Due to a solid<br>state amorphization reaction between Sc and Si, the formation of orthorhombic ScSi is preceded by the formation of an<br>amorphous ScSi phase. Orthorhombic ScSi formation is initiated at ~320°C by the crystallization of small nuclei at the<br>interface with Si, as evidenced for the first time by cross sectional transmission electron microscopy. These nuclei share<br>a singular epitaxial orientation, corresponding to the one of the large grains in the final ScSi film. Further crystallization<br>occurs anisotropically in the lateral direction. Along the c-axis, the initial epitaxial orientation is maintained. However,<br>along the a-axis, twin defects are generated, resulting in the small grain size.</p> |
| title | Anisotropic crystallization of orthorhombic ScSi on Si(001) substrates |
| url | https://doi.org/10.1063/5.0326525 |