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2025
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| Accés en línia: | https://doi.org/10.1364/OE.548003 |
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| _version_ | 1866901382971260928 |
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| author | Della Torre, Alberto Dubois, Florian Zarebidaki, Homa Volpini, Andrea Leo, Jacopo Mettraux, Arno Manzoor, Ayman Prieto, Ivan Grassani, Davide Dubochet, Olivier Despont, Michel Sattari, Hamed |
| author_facet | Della Torre, Alberto Dubois, Florian Zarebidaki, Homa Volpini, Andrea Leo, Jacopo Mettraux, Arno Manzoor, Ayman Prieto, Ivan Grassani, Davide Dubochet, Olivier Despont, Michel Sattari, Hamed |
| contents | <p>Integrated electro-optical modulators with small footprints and low half-wave voltage are essential for applications requiring high integration density and low power consumption. Modulators based on thin-film lithium niobate technology have been proven to perform excellently, both in terms of low voltage and high bandwidth operation. However, achieving half-wave voltages of ∼1 V, which allows to directly drive the modulator with CMOS circuits, typically requires long structures. Folding the device is a possible approach to achieve a CMOS-compatible voltage level in a compact design. Yet, this method requires meticulous design and advanced manufacturing technology. To achieve large scale deployment of this technology, it is imperative to further develop thin-film lithium niobate photonic integrated circuits manufacturing. Here, we address these requirements and report folded electro-optical modulators, operating at 1550 nm in TE polarization, with half-wave voltage as low as 0.9 V or bandwidths up to beyond 40 GHz in a compact 5 mm × 5 mm chip fabricated in CSEM’s open-access foundry process using standardized process design kit components.</p> |
| format | Recurso digital |
| id | zenodo_https___doi_org_10_1364_OE_548003 |
| institution | Zenodo |
| language | |
| publishDate | 2025 |
| publisher | Zenodo |
| record_format | zenodo |
| spellingShingle | Folded electro-optical modulators operating at CMOS voltage level in a thin-film lithium niobate foundry process Della Torre, Alberto Dubois, Florian Zarebidaki, Homa Volpini, Andrea Leo, Jacopo Mettraux, Arno Manzoor, Ayman Prieto, Ivan Grassani, Davide Dubochet, Olivier Despont, Michel Sattari, Hamed <p>Integrated electro-optical modulators with small footprints and low half-wave voltage are essential for applications requiring high integration density and low power consumption. Modulators based on thin-film lithium niobate technology have been proven to perform excellently, both in terms of low voltage and high bandwidth operation. However, achieving half-wave voltages of ∼1 V, which allows to directly drive the modulator with CMOS circuits, typically requires long structures. Folding the device is a possible approach to achieve a CMOS-compatible voltage level in a compact design. Yet, this method requires meticulous design and advanced manufacturing technology. To achieve large scale deployment of this technology, it is imperative to further develop thin-film lithium niobate photonic integrated circuits manufacturing. Here, we address these requirements and report folded electro-optical modulators, operating at 1550 nm in TE polarization, with half-wave voltage as low as 0.9 V or bandwidths up to beyond 40 GHz in a compact 5 mm × 5 mm chip fabricated in CSEM’s open-access foundry process using standardized process design kit components.</p> |
| title | Folded electro-optical modulators operating at CMOS voltage level in a thin-film lithium niobate foundry process |
| url | https://doi.org/10.1364/OE.548003 |