Salvato in:
| Autori principali: | , , , , , , , , , , , |
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| Natura: | Recurso digital |
| Lingua: | |
| Pubblicazione: |
Zenodo
2025
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| Accesso online: | https://doi.org/10.1364/OE.548003 |
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Sommario:
- <p>Integrated electro-optical modulators with small footprints and low half-wave voltage are essential for applications requiring high integration density and low power consumption. Modulators based on thin-film lithium niobate technology have been proven to perform excellently, both in terms of low voltage and high bandwidth operation. However, achieving half-wave voltages of ∼1 V, which allows to directly drive the modulator with CMOS circuits, typically requires long structures. Folding the device is a possible approach to achieve a CMOS-compatible voltage level in a compact design. Yet, this method requires meticulous design and advanced manufacturing technology. To achieve large scale deployment of this technology, it is imperative to further develop thin-film lithium niobate photonic integrated circuits manufacturing. Here, we address these requirements and report folded electro-optical modulators, operating at 1550 nm in TE polarization, with half-wave voltage as low as 0.9 V or bandwidths up to beyond 40 GHz in a compact 5 mm × 5 mm chip fabricated in CSEM’s open-access foundry process using standardized process design kit components.</p>