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Zenodo
2025
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| On-line přístup: | https://doi.org/10.3390/s23136225 |
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| _version_ | 1866901058862710784 |
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| author | Senger, Matias Macchiolo, Anna Kilminster, Benjamin Paternoster, Giovanni Centis Vignali, Matteo Borghi, Giacomo |
| author_facet | Senger, Matias Macchiolo, Anna Kilminster, Benjamin Paternoster, Giovanni Centis Vignali, Matteo Borghi, Giacomo |
| contents | <p>Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a no-gain region, such that the active area or fill factor is not sufficient for small pixel sizes. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the fill-factor problem, as the p-stop termination structure is replaced by isolated trenches etched in the silicon itself. In the TI-LGAD process, the p-stop termination structure, typical of LGADs, is replaced by isolating trenches etched in the silicon itself. This modification substantially reduces the size of the no-gain region, thus enabling the implementation of small pixels with an adequate fill factor value. In this article, a systematic characterization of the TI-RD50 production, the first of its kind entirely dedicated to the TI-LGAD technology, is presented. Designs are ranked according to their measured inter-pixel distance, and the time resolution is compared against the regular LGAD technology.</p> |
| format | Recurso digital |
| id | zenodo_https___doi_org_10_3390_s23136225 |
| institution | Zenodo |
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| publishDate | 2025 |
| publisher | Zenodo |
| record_format | zenodo |
| spellingShingle | A Comprehensive Characterization of the TI-LGAD Technology Senger, Matias Macchiolo, Anna Kilminster, Benjamin Paternoster, Giovanni Centis Vignali, Matteo Borghi, Giacomo <p>Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a no-gain region, such that the active area or fill factor is not sufficient for small pixel sizes. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the fill-factor problem, as the p-stop termination structure is replaced by isolated trenches etched in the silicon itself. In the TI-LGAD process, the p-stop termination structure, typical of LGADs, is replaced by isolating trenches etched in the silicon itself. This modification substantially reduces the size of the no-gain region, thus enabling the implementation of small pixels with an adequate fill factor value. In this article, a systematic characterization of the TI-RD50 production, the first of its kind entirely dedicated to the TI-LGAD technology, is presented. Designs are ranked according to their measured inter-pixel distance, and the time resolution is compared against the regular LGAD technology.</p> |
| title | A Comprehensive Characterization of the TI-LGAD Technology |
| url | https://doi.org/10.3390/s23136225 |