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| Main Authors: | , , , , , , |
|---|---|
| Format: | Recurso digital |
| Sprog: | engelsk |
| Udgivet: |
Zenodo
2024
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| Fag: | |
| Online adgang: | https://doi.org/10.5281/zenodo.15097739 |
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Indholdsfortegnelse:
- <p>This contribution reports on the optimization of the femtosecond laser facility in Bilbao for the application of Two-Photon Absorption Transient Current Technique (TPA-TCT) in silicon carbide (SiC) detectors. Originally demonstrated in 2022, TPA-TCT in SiC requires precise beam control and high spatial resolution, which are challenged by systematics such as pointing instabilities and spherical aberrations. Additionally, the talk introduces a proposal for a permanent, user-accessible TPA-TCT test stand for wide bandgap semiconductor materials—including SiC, GaN, and diamond—equipped with dynamic stabilization, aberration correction, and rapid sample positioning. This facility is intended to support collaborative detector R&D efforts within the DRD3 framework.</p>