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| Главные авторы: | , , , , |
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| Формат: | Recurso digital |
| Язык: | |
| Опубликовано: |
Zenodo
2025
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| Online-ссылка: | https://doi.org/10.5281/zenodo.15618530 |
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Оглавление:
- <p>A new kind of memory, termed thermal-breach memory, recently introduced in halide perovskites as<br>a consequence of its athermal metastable states combined with return-point memory. While<br>previously demonstrated at low temperatures (~150 K), we extend this concept to vanadium dioxide<br>(VO₂), which undergoes a metal-insulator transition above room temperature. By quantifying the<br>athermal nature of VO₂’s non-equilibrium states, we show that a 1 K thermal perturbation can be<br>detected through irreversible resistance change of its metastable state, enabling precise thermal<br>sensing. Moreover, the establishment of concept of thermal-breach memory above room<br>temperature broadens the scope of VO₂-based devices from voltage-driven to thermally controlled<br>computing operations.</p>