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| Hauptverfasser: | , , , , , , , |
|---|---|
| Format: | Recurso digital |
| Sprache: | Englisch |
| Veröffentlicht: |
Zenodo
2025
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| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.5281/zenodo.17921949 |
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Inhaltsangabe:
- <p>Abstract—In this study, calibration methods are performed on passive structures up to 110 GHz using off-wafer standards and<br>on-wafer standards. The open and short transistor interconnect measurements are analyzed through a comparison with the<br>electromagnetic (EM) predictive simulation. The results clearly demonstrate the benefits of utilizing on-wafer calibration methods to improve measurement accuracy by significantly reducing the parasitic effects due to the transistor’s interconnects.</p>