Lignende værker

• Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
  af: Kang, Jingxuan, et al.
  Udgivet: (2024)
• AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
  af: Buatip, N., et al.
  Udgivet: (2024)
• ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
  af: John, Philipp, et al.
  Udgivet: (2024)
• Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
  af: John, Philipp, et al.
  Udgivet: (2023)
• Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
  af: Kang, Jingxuan, et al.
  Udgivet: (2024)