GaAs Microcavity Exciton-Polaritons in a Trap
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2008
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866909977882394624 |
|---|---|
| author | Kim, Na Young Lai, Chih-Wei Utsunomiya, Shoko Roumpos, Georgios Fraser, Michael Deng, Hui Byrnes, Tim Recher, Patrik Kumada, Norio Fujisawa, Toshimasa Yamamoto, Yoshihisa |
| author_facet | Kim, Na Young Lai, Chih-Wei Utsunomiya, Shoko Roumpos, Georgios Fraser, Michael Deng, Hui Byrnes, Tim Recher, Patrik Kumada, Norio Fujisawa, Toshimasa Yamamoto, Yoshihisa |
| contents | We present a simple method to create an in-plane lateral potential in a semiconductor microcavity using a metal thin-film. Two types of potential are produced: a circular aperture and a one-dimensional (1D) periodic grating pattern. The amplitude of the potential induced by a 24 nm-6 nm Au/Ti film is on the order of a few hundreds of ueV measured at 6 ~ 8 K. Since the metal layer makes the electromagnetic fields to be close to zero at the metal-semiconductor interface, the photon mode is confined more inside of the cavity. As a consequence, the effective cavity length is reduced under the metal film, and the corresponding cavity resonance is blue-shifted. Our experimental results are in a good agreement with theoretical estimates. In addition, by applying a DC electric voltage to the metal film, we are able to modify the quantum well exciton mode due to the quantum confined Stark effect, inducing a ~ 1 meV potential at ~ 20 kV/cm. Our method produces a controllable in-plane spatial trap potential for lower exciton-polaritons (LPs), which can be a building block towards 1D arrays and 2D lattices of LP condensates. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_0805_4673 |
| institution | arXiv |
| publishDate | 2008 |
| record_format | arxiv |
| spellingShingle | GaAs Microcavity Exciton-Polaritons in a Trap Kim, Na Young Lai, Chih-Wei Utsunomiya, Shoko Roumpos, Georgios Fraser, Michael Deng, Hui Byrnes, Tim Recher, Patrik Kumada, Norio Fujisawa, Toshimasa Yamamoto, Yoshihisa Mesoscale and Nanoscale Physics We present a simple method to create an in-plane lateral potential in a semiconductor microcavity using a metal thin-film. Two types of potential are produced: a circular aperture and a one-dimensional (1D) periodic grating pattern. The amplitude of the potential induced by a 24 nm-6 nm Au/Ti film is on the order of a few hundreds of ueV measured at 6 ~ 8 K. Since the metal layer makes the electromagnetic fields to be close to zero at the metal-semiconductor interface, the photon mode is confined more inside of the cavity. As a consequence, the effective cavity length is reduced under the metal film, and the corresponding cavity resonance is blue-shifted. Our experimental results are in a good agreement with theoretical estimates. In addition, by applying a DC electric voltage to the metal film, we are able to modify the quantum well exciton mode due to the quantum confined Stark effect, inducing a ~ 1 meV potential at ~ 20 kV/cm. Our method produces a controllable in-plane spatial trap potential for lower exciton-polaritons (LPs), which can be a building block towards 1D arrays and 2D lattices of LP condensates. |
| title | GaAs Microcavity Exciton-Polaritons in a Trap |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/0805.4673 |