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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2011
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/1108.5844 |
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| _version_ | 1866909290860642304 |
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| author | Wu, Hao Jiang, Jie |
| author_facet | Wu, Hao Jiang, Jie |
| contents | In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1108_5844 |
| institution | arXiv |
| publishDate | 2011 |
| record_format | arxiv |
| spellingShingle | Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate Wu, Hao Jiang, Jie Analysis of PDEs In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity. |
| title | Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate |
| topic | Analysis of PDEs |
| url | https://arxiv.org/abs/1108.5844 |