Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate
Fuente:
arXiv
Guardado en:
| Autores principales: | , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2011
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866909290860642304 |
|---|---|
| author | Wu, Hao Jiang, Jie |
| author_facet | Wu, Hao Jiang, Jie |
| contents | In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1108_5844 |
| institution | arXiv |
| publishDate | 2011 |
| record_format | arxiv |
| spellingShingle | Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate Wu, Hao Jiang, Jie Analysis of PDEs In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity. |
| title | Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate |
| topic | Analysis of PDEs |
| url | https://arxiv.org/abs/1108.5844 |