Saved in:
| Main Authors: | , |
|---|---|
| Format: | Preprint |
| Published: |
2011
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/1108.5844 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Table of Contents:
- In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity.