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Bibliographic Details
Main Author: Ono, Tomoya
Format: Preprint
Published: 2012
Subjects:
Online Access:https://arxiv.org/abs/1211.0115
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author Ono, Tomoya
author_facet Ono, Tomoya
contents The scattering potential of the defects on Ge(001) surfaces is investigated by first-principles methods. The standing wave in the spatial map of the local density of states obtained by wave function matching is compared to the image of the differential conductance measured by scanning tunneling spectroscopy. The period of the standing wave and its phase shift agree with those in the experiment. It is found that the scattering potential becomes a barrier when the electronegativity of the upper atom of the dimer is larger than that of the lower atom, while it acts as a well in the opposite case.
format Preprint
id arxiv_https___arxiv_org_abs_1211_0115
institution arXiv
publishDate 2012
record_format arxiv
spellingShingle First-principles calculation of scattering potentials of Si-Ge and Sn-Ge dimers on Ge(001) surfaces
Ono, Tomoya
Materials Science
Computational Physics
The scattering potential of the defects on Ge(001) surfaces is investigated by first-principles methods. The standing wave in the spatial map of the local density of states obtained by wave function matching is compared to the image of the differential conductance measured by scanning tunneling spectroscopy. The period of the standing wave and its phase shift agree with those in the experiment. It is found that the scattering potential becomes a barrier when the electronegativity of the upper atom of the dimer is larger than that of the lower atom, while it acts as a well in the opposite case.
title First-principles calculation of scattering potentials of Si-Ge and Sn-Ge dimers on Ge(001) surfaces
topic Materials Science
Computational Physics
url https://arxiv.org/abs/1211.0115