Model of the Electrostatics and Tunneling Current of Metal-Graphene Junctions and Metal-Insulator-Graphene Heterostructures
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2013
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866916779098374144 |
|---|---|
| author | Chaves, Ferney A. Jiménez, David Cummings, Aron W. Roche, Stephan |
| author_facet | Chaves, Ferney A. Jiménez, David Cummings, Aron W. Roche, Stephan |
| contents | In this paper we present a comprehensive model for the tunneling current of the metal-insulator-graphene heterostructure, based on the Bardeen Transfer Hamiltonian method, of the metal-insulator-graphene heterostructure. As a particular case we have studied the metal-graphene junction, unveiling the role played by different electrical and physical parameters in determining the differential contact resistance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1309_0390 |
| institution | arXiv |
| publishDate | 2013 |
| record_format | arxiv |
| spellingShingle | Model of the Electrostatics and Tunneling Current of Metal-Graphene Junctions and Metal-Insulator-Graphene Heterostructures Chaves, Ferney A. Jiménez, David Cummings, Aron W. Roche, Stephan Mesoscale and Nanoscale Physics Materials Science In this paper we present a comprehensive model for the tunneling current of the metal-insulator-graphene heterostructure, based on the Bardeen Transfer Hamiltonian method, of the metal-insulator-graphene heterostructure. As a particular case we have studied the metal-graphene junction, unveiling the role played by different electrical and physical parameters in determining the differential contact resistance. |
| title | Model of the Electrostatics and Tunneling Current of Metal-Graphene Junctions and Metal-Insulator-Graphene Heterostructures |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/1309.0390 |