Ising lines: natural topological defects within chiral ferroelectric domain walls

Fuente: arXiv
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Main Authors: Stepkova, V., Marton, P., Hlinka, J.
Format: Preprint
Published: 2015
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_version_ 1866909366733504512
author Stepkova, V.
Marton, P.
Hlinka, J.
author_facet Stepkova, V.
Marton, P.
Hlinka, J.
contents Phase-field simulations demonstrate that the polarization order-parameter field in the Ginzburg-Landau-Devonshire model of rhombohedral ferroelectric BaTiO3 allows for an interesting linear defect, stable under simple periodic boundary conditions. This linear defect, termed here as Ising line, can be described as about 2 nm thick intrinsic paraelectric nanorod acting as a highly mobile borderline between finite portions of Bloch-like domain walls of the opposite helicity. These Ising lines play the role of domain boundaries associated with the Ising-to-Bloch domain wall phase transition.
format Preprint
id arxiv_https___arxiv_org_abs_1504_07200
institution arXiv
publishDate 2015
record_format arxiv
spellingShingle Ising lines: natural topological defects within chiral ferroelectric domain walls
Stepkova, V.
Marton, P.
Hlinka, J.
Mesoscale and Nanoscale Physics
Materials Science
Other Condensed Matter
Phase-field simulations demonstrate that the polarization order-parameter field in the Ginzburg-Landau-Devonshire model of rhombohedral ferroelectric BaTiO3 allows for an interesting linear defect, stable under simple periodic boundary conditions. This linear defect, termed here as Ising line, can be described as about 2 nm thick intrinsic paraelectric nanorod acting as a highly mobile borderline between finite portions of Bloch-like domain walls of the opposite helicity. These Ising lines play the role of domain boundaries associated with the Ising-to-Bloch domain wall phase transition.
title Ising lines: natural topological defects within chiral ferroelectric domain walls
topic Mesoscale and Nanoscale Physics
Materials Science
Other Condensed Matter
url https://arxiv.org/abs/1504.07200