Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)
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arXiv
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| Autores principales: | , , , , , |
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| Formato: | Preprint |
| Publicado: |
2017
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| _version_ | 1866915932382691328 |
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| author | Que, Yande Xiao, Wende Chen, Hui Wang, Dongfei Du, Shixuan Gao, Hong-Jun |
| author_facet | Que, Yande Xiao, Wende Chen, Hui Wang, Dongfei Du, Shixuan Gao, Hong-Jun |
| contents | The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1702_03045 |
| institution | arXiv |
| publishDate | 2017 |
| record_format | arxiv |
| spellingShingle | Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001) Que, Yande Xiao, Wende Chen, Hui Wang, Dongfei Du, Shixuan Gao, Hong-Jun Materials Science The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene. |
| title | Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001) |
| topic | Materials Science |
| url | https://arxiv.org/abs/1702.03045 |