Symmetry-enforced Fermi degeneracy in topological semimetal RhSb$_3$
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arXiv
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| Natura: | Preprint |
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2017
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| _version_ | 1866916118880321536 |
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| author | Wang, Kefeng Wang, Limin Liu, I-Lin Boschini, F. Zonno, M. Michiardi, M. Rotenberg, E. Bostwick, A. Graf, D. Ramshaw, B. J. Damascelli, A. Paglione, J. |
| author_facet | Wang, Kefeng Wang, Limin Liu, I-Lin Boschini, F. Zonno, M. Michiardi, M. Rotenberg, E. Bostwick, A. Graf, D. Ramshaw, B. J. Damascelli, A. Paglione, J. |
| contents | Predictions of a topological electronic structure in the skutterudite TPn$_3$ family (T=transition metal, Pn=pnictogen) are investigated via magnetoresistance, quantum oscillations and angle-resolved photoemission experiments of RhSb$_3$, an unfilled skutterudite semimetal with low carrier density. Electronic band structure calculations and symmetry analysis of RhSb$_3$ indicate this material to be a zero-gap semimetal protected by symmetry with inverted valence/conduction bands that touch at the $Γ$ point close to the Fermi level. Transport experiments reveal an unsaturated linear magnetoresistance that approaches a factor of 200 at 60~T magnetic fields, and quantum oscillations observable up to 150~K that are consistent with a large Fermi velocity ($\sim 1.3\times 10^6$ m/s), high carrier mobility ($\sim 14$ m$^2$/Vs), and the existence of a small three dimensional hole pocket. A very small, sample-dependent effective mass falls to values as low as $0.018(2)$ of the bare electron mass and scales with Fermi wavevector. This, together with a non-zero Berry's phase and location of the Fermi level in the linear region of the valence band, suggests RhSb$_3$ as representative of a new class of toplogical semimeals with symmetry-enforced Fermi degeneracy at the high symmetry points. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1703_04673 |
| institution | arXiv |
| publishDate | 2017 |
| record_format | arxiv |
| spellingShingle | Symmetry-enforced Fermi degeneracy in topological semimetal RhSb$_3$ Wang, Kefeng Wang, Limin Liu, I-Lin Boschini, F. Zonno, M. Michiardi, M. Rotenberg, E. Bostwick, A. Graf, D. Ramshaw, B. J. Damascelli, A. Paglione, J. Materials Science Predictions of a topological electronic structure in the skutterudite TPn$_3$ family (T=transition metal, Pn=pnictogen) are investigated via magnetoresistance, quantum oscillations and angle-resolved photoemission experiments of RhSb$_3$, an unfilled skutterudite semimetal with low carrier density. Electronic band structure calculations and symmetry analysis of RhSb$_3$ indicate this material to be a zero-gap semimetal protected by symmetry with inverted valence/conduction bands that touch at the $Γ$ point close to the Fermi level. Transport experiments reveal an unsaturated linear magnetoresistance that approaches a factor of 200 at 60~T magnetic fields, and quantum oscillations observable up to 150~K that are consistent with a large Fermi velocity ($\sim 1.3\times 10^6$ m/s), high carrier mobility ($\sim 14$ m$^2$/Vs), and the existence of a small three dimensional hole pocket. A very small, sample-dependent effective mass falls to values as low as $0.018(2)$ of the bare electron mass and scales with Fermi wavevector. This, together with a non-zero Berry's phase and location of the Fermi level in the linear region of the valence band, suggests RhSb$_3$ as representative of a new class of toplogical semimeals with symmetry-enforced Fermi degeneracy at the high symmetry points. |
| title | Symmetry-enforced Fermi degeneracy in topological semimetal RhSb$_3$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/1703.04673 |