Intersubband polarons in oxides

Fuente: arXiv
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Main Authors: Bajo, M. Montes, Tamayo-Arriola, J., Hugues, M., Ulloa, J. M., Biavan, N. Le, Peretti, R., Julien, F. H., Faist, J., Chauveau, J. M., Hierro, A.
Format: Preprint
Published: 2017
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author Bajo, M. Montes
Tamayo-Arriola, J.
Hugues, M.
Ulloa, J. M.
Biavan, N. Le
Peretti, R.
Julien, F. H.
Faist, J.
Chauveau, J. M.
Hierro, A.
author_facet Bajo, M. Montes
Tamayo-Arriola, J.
Hugues, M.
Ulloa, J. M.
Biavan, N. Le
Peretti, R.
Julien, F. H.
Faist, J.
Chauveau, J. M.
Hierro, A.
contents Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequency due to the very dense 2DEG achieved and the large difference between the static and high-frequency dielectric constants in ZnO. The ISB polaron is observed optically in multiple QW structures with 2DEG densities ranging from $5\times 10^{12}$ to $5\times 10^{13}$ cm$^{-2}$, where an unprecedented regime is reached in which the frequency of the upper ISB polaron branch is three times larger than that of the bare ISB transition. This study opens new prospects to the exploitation of oxides in phenomena happening in the ultrastrong coupling regime.
format Preprint
id arxiv_https___arxiv_org_abs_1703_07743
institution arXiv
publishDate 2017
record_format arxiv
spellingShingle Intersubband polarons in oxides
Bajo, M. Montes
Tamayo-Arriola, J.
Hugues, M.
Ulloa, J. M.
Biavan, N. Le
Peretti, R.
Julien, F. H.
Faist, J.
Chauveau, J. M.
Hierro, A.
Materials Science
Mesoscale and Nanoscale Physics
Other Condensed Matter
Optics
Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequency due to the very dense 2DEG achieved and the large difference between the static and high-frequency dielectric constants in ZnO. The ISB polaron is observed optically in multiple QW structures with 2DEG densities ranging from $5\times 10^{12}$ to $5\times 10^{13}$ cm$^{-2}$, where an unprecedented regime is reached in which the frequency of the upper ISB polaron branch is three times larger than that of the bare ISB transition. This study opens new prospects to the exploitation of oxides in phenomena happening in the ultrastrong coupling regime.
title Intersubband polarons in oxides
topic Materials Science
Mesoscale and Nanoscale Physics
Other Condensed Matter
Optics
url https://arxiv.org/abs/1703.07743