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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2017
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/1707.02819 |
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| _version_ | 1866929296459694080 |
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| author | Li, Jiesen Lin, Wanxing Shi, Junjun Zhu, Feng Xie, Haiwen Yao, Dao-Xin |
| author_facet | Li, Jiesen Lin, Wanxing Shi, Junjun Zhu, Feng Xie, Haiwen Yao, Dao-Xin |
| contents | The two-dimensional (2D) IV-V semiconductors have attracted much attention due to their fascinating electronic and optical properties. In this work, we predicted three phases of silicon nitrides, denoted $α$-Si$_{2}$N$_{2}$, $β$-Si$_{2}$N$_{2}$, and $γ$-Si$_{4}$N$_{4}$, respectively. Both $α$-Si$_{2}$N$_{2}$ and $β$-Si$_{2}$N$_{2}$ consist of two buckled SiN sheets, and $γ$-Si$_{4}$N$_{4}$ consists of two puckered SiN sheets. It is challenging to transform between $α$-Si$_{2}$N$_{2}$ and $β$-Si$_{2}$N$_{2}$ because of the high energy barrier. The three dynamically stable bilayers are semiconductors with fundamental indirect band gaps from 0.25 eV to 2.92 eV. As expected, only the s and p orbitals contribute to the electronic states, and the pz orbitals dominate near the Fermi level. Furthermore, insulator-metal transitions occur in $α$-Si$_{2}$N$_{2}$ and $β$-Si$_{2}$N$_{2}$ under the biaxial strain of 16%. These materials perhaps have potential applications in microelectronics and spintronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1707_02819 |
| institution | arXiv |
| publishDate | 2017 |
| record_format | arxiv |
| spellingShingle | Phonon and electronic properties of semiconducting silicon nitride bilayers Li, Jiesen Lin, Wanxing Shi, Junjun Zhu, Feng Xie, Haiwen Yao, Dao-Xin Materials Science The two-dimensional (2D) IV-V semiconductors have attracted much attention due to their fascinating electronic and optical properties. In this work, we predicted three phases of silicon nitrides, denoted $α$-Si$_{2}$N$_{2}$, $β$-Si$_{2}$N$_{2}$, and $γ$-Si$_{4}$N$_{4}$, respectively. Both $α$-Si$_{2}$N$_{2}$ and $β$-Si$_{2}$N$_{2}$ consist of two buckled SiN sheets, and $γ$-Si$_{4}$N$_{4}$ consists of two puckered SiN sheets. It is challenging to transform between $α$-Si$_{2}$N$_{2}$ and $β$-Si$_{2}$N$_{2}$ because of the high energy barrier. The three dynamically stable bilayers are semiconductors with fundamental indirect band gaps from 0.25 eV to 2.92 eV. As expected, only the s and p orbitals contribute to the electronic states, and the pz orbitals dominate near the Fermi level. Furthermore, insulator-metal transitions occur in $α$-Si$_{2}$N$_{2}$ and $β$-Si$_{2}$N$_{2}$ under the biaxial strain of 16%. These materials perhaps have potential applications in microelectronics and spintronics. |
| title | Phonon and electronic properties of semiconducting silicon nitride bilayers |
| topic | Materials Science |
| url | https://arxiv.org/abs/1707.02819 |