Ultrafast Graphene Light Emitter

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Kim, Young Duck, Gao, Yuanda, Shiue, Ren-Jye, Wang, Lei, Aslan, Ozgur Burak, Bae, Myung-Ho, Kim, Hyungsik, Seo, Dongjea, Choi, Heon-Jin, Kim, Suk Hyun, Nemilentsau, Andrei, Low, Tony, Tan, Cheng, Efetov, Dmitri K., Taniguchi, Takashi, Watanabe, Kenji, Shepard, Kenneth L., Heinz, Tony F., Englund, Dirk, Hone, James
Format: Preprint
Published: 2017
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866915304304541696
author Kim, Young Duck
Gao, Yuanda
Shiue, Ren-Jye
Wang, Lei
Aslan, Ozgur Burak
Bae, Myung-Ho
Kim, Hyungsik
Seo, Dongjea
Choi, Heon-Jin
Kim, Suk Hyun
Nemilentsau, Andrei
Low, Tony
Tan, Cheng
Efetov, Dmitri K.
Taniguchi, Takashi
Watanabe, Kenji
Shepard, Kenneth L.
Heinz, Tony F.
Englund, Dirk
Hone, James
author_facet Kim, Young Duck
Gao, Yuanda
Shiue, Ren-Jye
Wang, Lei
Aslan, Ozgur Burak
Bae, Myung-Ho
Kim, Hyungsik
Seo, Dongjea
Choi, Heon-Jin
Kim, Suk Hyun
Nemilentsau, Andrei
Low, Tony
Tan, Cheng
Efetov, Dmitri K.
Taniguchi, Takashi
Watanabe, Kenji
Shepard, Kenneth L.
Heinz, Tony F.
Englund, Dirk
Hone, James
contents Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth, across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge carrier dynamics in graphene, and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460 % enhancement compared to the grey-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2,000 K under ambient conditions, as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.
format Preprint
id arxiv_https___arxiv_org_abs_1710_08599
institution arXiv
publishDate 2017
record_format arxiv
spellingShingle Ultrafast Graphene Light Emitter
Kim, Young Duck
Gao, Yuanda
Shiue, Ren-Jye
Wang, Lei
Aslan, Ozgur Burak
Bae, Myung-Ho
Kim, Hyungsik
Seo, Dongjea
Choi, Heon-Jin
Kim, Suk Hyun
Nemilentsau, Andrei
Low, Tony
Tan, Cheng
Efetov, Dmitri K.
Taniguchi, Takashi
Watanabe, Kenji
Shepard, Kenneth L.
Heinz, Tony F.
Englund, Dirk
Hone, James
Mesoscale and Nanoscale Physics
Materials Science
Applied Physics
Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth, across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge carrier dynamics in graphene, and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460 % enhancement compared to the grey-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2,000 K under ambient conditions, as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.
title Ultrafast Graphene Light Emitter
topic Mesoscale and Nanoscale Physics
Materials Science
Applied Physics
url https://arxiv.org/abs/1710.08599