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| Auteurs principaux: | , , , |
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| Format: | Preprint |
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2017
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| Accès en ligne: | https://arxiv.org/abs/1712.03011 |
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| _version_ | 1866915129857146880 |
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| author | Murphy-Armando, Felipe Liu, Chang Zhao, Yi Duffy, Ray |
| author_facet | Murphy-Armando, Felipe Liu, Chang Zhao, Yi Duffy, Ray |
| contents | Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade. Despite this, a systematic study of the impact of strain on off-state leakage current has been lacking. In this work we use experimental data and ab-initio calculations to refine existing models to account for the impact of strain on band-to-band tunnelling and trap-assisted tunnelling in silicon. We observe that the strain may dramatically increase the leakage current, depending on the type of tunnelling involved. For band-to-band and trap-assisted tunnelling, low uniaxial strains of 0.1% (or 180 MPa) can increase the leakage current by 60% and 10% compared to the unstrained case, respectively. Using our models, we predict that compressive strain on the order of 1% (or 2 GPa) can increase the leakage current by 150 times. Conversely, tensile strain may diminish or at most double the leakage current in all observed cases. Though detrimental in conventional inversion-mode MOSFETs, these processes may be used to boost the performance of Tunnel Field Effect Transistors, where on-state current is defined by band-to-band tunnelling. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1712_03011 |
| institution | arXiv |
| publishDate | 2017 |
| record_format | arxiv |
| spellingShingle | Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory Murphy-Armando, Felipe Liu, Chang Zhao, Yi Duffy, Ray Mesoscale and Nanoscale Physics Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade. Despite this, a systematic study of the impact of strain on off-state leakage current has been lacking. In this work we use experimental data and ab-initio calculations to refine existing models to account for the impact of strain on band-to-band tunnelling and trap-assisted tunnelling in silicon. We observe that the strain may dramatically increase the leakage current, depending on the type of tunnelling involved. For band-to-band and trap-assisted tunnelling, low uniaxial strains of 0.1% (or 180 MPa) can increase the leakage current by 60% and 10% compared to the unstrained case, respectively. Using our models, we predict that compressive strain on the order of 1% (or 2 GPa) can increase the leakage current by 150 times. Conversely, tensile strain may diminish or at most double the leakage current in all observed cases. Though detrimental in conventional inversion-mode MOSFETs, these processes may be used to boost the performance of Tunnel Field Effect Transistors, where on-state current is defined by band-to-band tunnelling. |
| title | Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/1712.03011 |