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Main Authors: Arı, Ozan, Polat, Nahit, Fırat, Volkan, Çakır, Özgür, Ates, Serkan
Format: Preprint
Published: 2018
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Online Access:https://arxiv.org/abs/1808.10611
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_version_ 1866910939084750848
author Arı, Ozan
Polat, Nahit
Fırat, Volkan
Çakır, Özgür
Ates, Serkan
author_facet Arı, Ozan
Polat, Nahit
Fırat, Volkan
Çakır, Özgür
Ates, Serkan
contents We investigate temperature-dependent spectral properties of a single defect in hexagonal boron nitride (hBN). We observe a sharp zero-phonon line (ZPL) emission accompanied by Stokes and anti-Stokes optical phonon sidebands assisted by the Raman active low-energy ($\approx~6.5$ meV) interlayer shear mode of hBN. Spectral lineshape around the ZPL is measured down to 78 K, at which the linewidth of the ZPL is measured as 172 $μ$eV. By employing a quadratic electron-phonon interaction, the temperature-dependent broadening and the lineshift of the ZPL are found to follow $T+T^5$ and $T+T^3$ temperature dependence, respectively. Furthermore, the temperature-dependent lineshape around the ZPL is modeled with a linear electron-phonon coupling theory, which results in the Debye-Waller factor of the ZPL emission as 0.59.
format Preprint
id arxiv_https___arxiv_org_abs_1808_10611
institution arXiv
publishDate 2018
record_format arxiv
spellingShingle The effect of electron-phonon interactions on the spectral properties of single defects in hexagonal boron nitride
Arı, Ozan
Polat, Nahit
Fırat, Volkan
Çakır, Özgür
Ates, Serkan
Mesoscale and Nanoscale Physics
We investigate temperature-dependent spectral properties of a single defect in hexagonal boron nitride (hBN). We observe a sharp zero-phonon line (ZPL) emission accompanied by Stokes and anti-Stokes optical phonon sidebands assisted by the Raman active low-energy ($\approx~6.5$ meV) interlayer shear mode of hBN. Spectral lineshape around the ZPL is measured down to 78 K, at which the linewidth of the ZPL is measured as 172 $μ$eV. By employing a quadratic electron-phonon interaction, the temperature-dependent broadening and the lineshift of the ZPL are found to follow $T+T^5$ and $T+T^3$ temperature dependence, respectively. Furthermore, the temperature-dependent lineshape around the ZPL is modeled with a linear electron-phonon coupling theory, which results in the Debye-Waller factor of the ZPL emission as 0.59.
title The effect of electron-phonon interactions on the spectral properties of single defects in hexagonal boron nitride
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/1808.10611