Surface structures of tellurium on Si(111)-(7x7) studied by low-energy electron diffraction and scanning tunneling microscopy
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2018
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866911766453157888 |
|---|---|
| author | Lüpke, Felix Doležal, Jiří Cherepanov, Vasily Ošt'ádal, Ivan Tautz, F. Stefan Voigtländer, Bert |
| author_facet | Lüpke, Felix Doležal, Jiří Cherepanov, Vasily Ošt'ádal, Ivan Tautz, F. Stefan Voigtländer, Bert |
| contents | The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$\times$7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)$-$(7$\times$7) surface at room temperature results in an amorphous Te layer, increasing the substrate temperature to $770\rm\,K$ results in a weak (7$\times$7) electron diffraction pattern. Scanning tunneling microscopy of this surface shows remaining corner holes from the Si(111)$-$(7$\times$7) surface reconstruction and clusters in the faulted and unfaulted halves of the (7$\times$7) unit cells. Increasing the substrate temperature further to $920\rm\,K$ leads to a Te/Si(111)$-(2\sqrt3\times2\sqrt{3})\rm R30^{\circ}$ surface reconstruction. We find that this surface configuration has an atomically flat structure with threefold symmetry. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1810_05553 |
| institution | arXiv |
| publishDate | 2018 |
| record_format | arxiv |
| spellingShingle | Surface structures of tellurium on Si(111)-(7x7) studied by low-energy electron diffraction and scanning tunneling microscopy Lüpke, Felix Doležal, Jiří Cherepanov, Vasily Ošt'ádal, Ivan Tautz, F. Stefan Voigtländer, Bert Mesoscale and Nanoscale Physics The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$\times$7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)$-$(7$\times$7) surface at room temperature results in an amorphous Te layer, increasing the substrate temperature to $770\rm\,K$ results in a weak (7$\times$7) electron diffraction pattern. Scanning tunneling microscopy of this surface shows remaining corner holes from the Si(111)$-$(7$\times$7) surface reconstruction and clusters in the faulted and unfaulted halves of the (7$\times$7) unit cells. Increasing the substrate temperature further to $920\rm\,K$ leads to a Te/Si(111)$-(2\sqrt3\times2\sqrt{3})\rm R30^{\circ}$ surface reconstruction. We find that this surface configuration has an atomically flat structure with threefold symmetry. |
| title | Surface structures of tellurium on Si(111)-(7x7) studied by low-energy electron diffraction and scanning tunneling microscopy |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/1810.05553 |