$\mathrm{TlP_5}$: An unexplored direct band gap 2D semiconductor with ultra-high carrier mobility
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arXiv
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2018
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| _version_ | 1866912029350035456 |
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| author | Yuan, Jun-Hui Cresti, Alessandro Xue, Kan-Hao Song, Ya-Qian Su, Hai-Lei Li, Li-Heng Miao, Nai-Hua Sun, Zhi-Mei Wang, Jia-Fu Miao, Xiang-Shui |
| author_facet | Yuan, Jun-Hui Cresti, Alessandro Xue, Kan-Hao Song, Ya-Qian Su, Hai-Lei Li, Li-Heng Miao, Nai-Hua Sun, Zhi-Mei Wang, Jia-Fu Miao, Xiang-Shui |
| contents | Two-dimensional materials with a proper band gap and high carrier mobility are urgently desired in the field of nanoelectronics. We propose a novel two-dimensional crystal monolayer $\mathrm{TlP_5}$, which is dynamically and thermodynamically stable and possesses a direct band gap of 2.02 eV with high carrier mobilities (13960 $\mathrm{cm^2\ V^{-1}s^{-1}}$ for electrons and 7560 $\mathrm{cm^2\ V^{-1}s^{-1}}$ for holes), comparable to that of phosphorene. The band gap value and band characteristics of monolayer $\mathrm{TlP_5}$ can be adjusted by biaxial and uniaxial strains, and excellent optical absorption over the visible-light range is predicted. These properties, especially for the balanced high mobilities for not only the electrons but also the holes, render monolayer $\mathrm{TlP_5}$ an exciting functional material for future nanoelectronics and optoelectronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1810_07489 |
| institution | arXiv |
| publishDate | 2018 |
| record_format | arxiv |
| spellingShingle | $\mathrm{TlP_5}$: An unexplored direct band gap 2D semiconductor with ultra-high carrier mobility Yuan, Jun-Hui Cresti, Alessandro Xue, Kan-Hao Song, Ya-Qian Su, Hai-Lei Li, Li-Heng Miao, Nai-Hua Sun, Zhi-Mei Wang, Jia-Fu Miao, Xiang-Shui Materials Science Two-dimensional materials with a proper band gap and high carrier mobility are urgently desired in the field of nanoelectronics. We propose a novel two-dimensional crystal monolayer $\mathrm{TlP_5}$, which is dynamically and thermodynamically stable and possesses a direct band gap of 2.02 eV with high carrier mobilities (13960 $\mathrm{cm^2\ V^{-1}s^{-1}}$ for electrons and 7560 $\mathrm{cm^2\ V^{-1}s^{-1}}$ for holes), comparable to that of phosphorene. The band gap value and band characteristics of monolayer $\mathrm{TlP_5}$ can be adjusted by biaxial and uniaxial strains, and excellent optical absorption over the visible-light range is predicted. These properties, especially for the balanced high mobilities for not only the electrons but also the holes, render monolayer $\mathrm{TlP_5}$ an exciting functional material for future nanoelectronics and optoelectronic applications. |
| title | $\mathrm{TlP_5}$: An unexplored direct band gap 2D semiconductor with ultra-high carrier mobility |
| topic | Materials Science |
| url | https://arxiv.org/abs/1810.07489 |