$\mathrm{TlP_5}$: An unexplored direct band gap 2D semiconductor with ultra-high carrier mobility

Documenti analoghi

• KTlO: A metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism
  di: Song, Ya-Qian, et al.
  Pubblicazione: (2018)
• $\mathrm{BaAs_3}$: A narrow gap 2D semiconductor with vacancy-induced semiconductor-metal transition
  di: Tang, Ping, et al.
  Pubblicazione: (2019)
• Two dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting
  di: Zhu, Yun-Lai, et al.
  Pubblicazione: (2018)
• Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor
  di: Zhang, Zailan, et al.
  Pubblicazione: (2024)
• Planar penta-transition metal phosphide and arsenide as narrow-bandgap semiconductors from first principle calculations
  di: Yuan, Jun-Hui, et al.
  Pubblicazione: (2018)