$\mathrm{BaAs_3}$: A narrow gap 2D semiconductor with vacancy-induced semiconductor-metal transition

Fuente: arXiv

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Bibliographic Details
Main Authors:	Tang, Ping, Yuan, Jun-Hui, Song, Ya-Qian, Xu, Ming, Xue, Kan-Hao, Miao, Xiang-Shui
Format:	Preprint
Published:	2019
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/1904.08742