$\mathrm{BaAs_3}$: A narrow gap 2D semiconductor with vacancy-induced semiconductor-metal transition
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arXiv
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| Hauptverfasser: | , , , , , |
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| Format: | Preprint |
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2019
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| _version_ | 1866913500783181824 |
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| author | Tang, Ping Yuan, Jun-Hui Song, Ya-Qian Xu, Ming Xue, Kan-Hao Miao, Xiang-Shui |
| author_facet | Tang, Ping Yuan, Jun-Hui Song, Ya-Qian Xu, Ming Xue, Kan-Hao Miao, Xiang-Shui |
| contents | Searching for novel two-dimensional (2D) materials is highly desired in the field of nanoelectronics. We here propose a new 2D crystal barium tri-arsenide ($\mathrm{BaAs_3}$) with a series of encouraging functionalities. Being kinetically and thermally stable, the monolayer and bilayer forms of $\mathrm{BaAs_3}$ possess narrow indirect band gaps of 0.87 eV and 0.40 eV, respectively, with high hole mobilities on the order of ~$\mathrm{10^3\ cm^{2}\,V^{-1}\,s^{-1}}$. The electronic properties of 2D $\mathrm{BaAs_3}$ can be manipulated by controlling the layer thickness. The favorable cleavage energy reveals that layered $\mathrm{BaAs_3}$ can be produced as a freestanding 2D material. Furthermore, by introducing vacancy defects monolayer $\mathrm{BaAs_3}$ can be transformed from a semiconductor to a metal. 2D $\mathrm{BaAs_3}$ may find promising applications in nanoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_1904_08742 |
| institution | arXiv |
| publishDate | 2019 |
| record_format | arxiv |
| spellingShingle | $\mathrm{BaAs_3}$: A narrow gap 2D semiconductor with vacancy-induced semiconductor-metal transition Tang, Ping Yuan, Jun-Hui Song, Ya-Qian Xu, Ming Xue, Kan-Hao Miao, Xiang-Shui Materials Science Searching for novel two-dimensional (2D) materials is highly desired in the field of nanoelectronics. We here propose a new 2D crystal barium tri-arsenide ($\mathrm{BaAs_3}$) with a series of encouraging functionalities. Being kinetically and thermally stable, the monolayer and bilayer forms of $\mathrm{BaAs_3}$ possess narrow indirect band gaps of 0.87 eV and 0.40 eV, respectively, with high hole mobilities on the order of ~$\mathrm{10^3\ cm^{2}\,V^{-1}\,s^{-1}}$. The electronic properties of 2D $\mathrm{BaAs_3}$ can be manipulated by controlling the layer thickness. The favorable cleavage energy reveals that layered $\mathrm{BaAs_3}$ can be produced as a freestanding 2D material. Furthermore, by introducing vacancy defects monolayer $\mathrm{BaAs_3}$ can be transformed from a semiconductor to a metal. 2D $\mathrm{BaAs_3}$ may find promising applications in nanoelectronic devices. |
| title | $\mathrm{BaAs_3}$: A narrow gap 2D semiconductor with vacancy-induced semiconductor-metal transition |
| topic | Materials Science |
| url | https://arxiv.org/abs/1904.08742 |