Erratum: Photovoltage from ferroelectric domain walls in BiFeO$_3$
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| Format: | Preprint |
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2019
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| _version_ | 1866929743201304576 |
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| author | Körbel, Sabine Sanvito, Stefano |
| author_facet | Körbel, Sabine Sanvito, Stefano |
| contents | In the original article a mistake in the methodology lead to an incorrect prediction of exciton delocalization below a critical exciton density. This unrealistic delocalized exciton state yielded a sizable domain-wall photovoltage. When done correctly, the simulations yield self-trapped (localized) excitons at all considered exciton densities, without any evidence for a transition to a delocalized exciton. This realistic self-trapped exciton state yields only a negligible domain-wall photovoltage. The original conclusion that ferroelectric domain walls could be responsible for the measured photovoltage if carrier lifetime and diffusion length are higher than expected is incorrect. Correct is: The domain-wall photovoltage in BiFeO3 is much too small to explain the measured photovoltage. The original analysis is meaningful for ferroelectrics without carrier self-trapping, not for BiFeO3. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_1905_10321 |
| institution | arXiv |
| publishDate | 2019 |
| record_format | arxiv |
| spellingShingle | Erratum: Photovoltage from ferroelectric domain walls in BiFeO$_3$ Körbel, Sabine Sanvito, Stefano Materials Science 82D45 In the original article a mistake in the methodology lead to an incorrect prediction of exciton delocalization below a critical exciton density. This unrealistic delocalized exciton state yielded a sizable domain-wall photovoltage. When done correctly, the simulations yield self-trapped (localized) excitons at all considered exciton densities, without any evidence for a transition to a delocalized exciton. This realistic self-trapped exciton state yields only a negligible domain-wall photovoltage. The original conclusion that ferroelectric domain walls could be responsible for the measured photovoltage if carrier lifetime and diffusion length are higher than expected is incorrect. Correct is: The domain-wall photovoltage in BiFeO3 is much too small to explain the measured photovoltage. The original analysis is meaningful for ferroelectrics without carrier self-trapping, not for BiFeO3. |
| title | Erratum: Photovoltage from ferroelectric domain walls in BiFeO$_3$ |
| topic | Materials Science 82D45 |
| url | https://arxiv.org/abs/1905.10321 |