Local Electric Field Measurement in GaN Diodes by exciton Franz-Keldysh Photocurrent Spectroscopy
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arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
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2020
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| _version_ | 1866914079180849152 |
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| author | Verma, Darpan Adnan, Md Mohsinur Rahman Rahman, Mohammad Wahidur Rajan, Siddharth Myers, Roberto C. |
| author_facet | Verma, Darpan Adnan, Md Mohsinur Rahman Rahman, Mohammad Wahidur Rajan, Siddharth Myers, Roberto C. |
| contents | The eXciton Franz-Keldysh (XFK) effect is observed in GaN p-n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broad photon energy range to an XFK model using only a single fit parameter that determines the lineshape, the local bias ($V_{l}$), uniquely determining the local electric field maximum and depletion widths. As expected, the spectrally determined values of $V_{l}$ vary linearly with the applied bias ($V$) and reveal a large reduction in the local electric field due to electrostatic non-uniformity. The built-in bias ($V_{bi}$) is estimated by extrapolating $V_{l}$ at $V=0$, which compared with independent C-V measurements indicates an overall $\pm$0.31 V accuracy of $V_{l}$. This demonstrates sub-bandgap photocurrent spectroscopy as a local probe of electric field in wide bandgap diodes that can be used to map out regions of device breakdown (hot spots) for improving electrostatic design of high voltage devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2001_03583 |
| institution | arXiv |
| publishDate | 2020 |
| record_format | arxiv |
| spellingShingle | Local Electric Field Measurement in GaN Diodes by exciton Franz-Keldysh Photocurrent Spectroscopy Verma, Darpan Adnan, Md Mohsinur Rahman Rahman, Mohammad Wahidur Rajan, Siddharth Myers, Roberto C. Applied Physics Materials Science The eXciton Franz-Keldysh (XFK) effect is observed in GaN p-n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broad photon energy range to an XFK model using only a single fit parameter that determines the lineshape, the local bias ($V_{l}$), uniquely determining the local electric field maximum and depletion widths. As expected, the spectrally determined values of $V_{l}$ vary linearly with the applied bias ($V$) and reveal a large reduction in the local electric field due to electrostatic non-uniformity. The built-in bias ($V_{bi}$) is estimated by extrapolating $V_{l}$ at $V=0$, which compared with independent C-V measurements indicates an overall $\pm$0.31 V accuracy of $V_{l}$. This demonstrates sub-bandgap photocurrent spectroscopy as a local probe of electric field in wide bandgap diodes that can be used to map out regions of device breakdown (hot spots) for improving electrostatic design of high voltage devices. |
| title | Local Electric Field Measurement in GaN Diodes by exciton Franz-Keldysh Photocurrent Spectroscopy |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2001.03583 |