CMOS compatible high-performance nanolasing based on perovskite-SiN hybrid integration

Fuente: arXiv
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Hauptverfasser: He, Z., Chen, B., Hua, Y., Liu, Z., Wei, Y., Liu, S., Hu, A., Shen, X., Zhang, Y., Gao, Y., Liu, J.
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Veröffentlicht: 2020
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author He, Z.
Chen, B.
Hua, Y.
Liu, Z.
Wei, Y.
Liu, S.
Hu, A.
Shen, X.
Zhang, Y.
Gao, Y.
Liu, J.
author_facet He, Z.
Chen, B.
Hua, Y.
Liu, Z.
Wei, Y.
Liu, S.
Hu, A.
Shen, X.
Zhang, Y.
Gao, Y.
Liu, J.
contents Coherent light sources in silicon photonics are the long-sought holy grail because silicon-based materials have indirect bandgap. Traditional strategies for realizing such sources, e.g., heterogeneous photonic integration, strain engineering and nonlinear process, are technologically demanding. Here, we demonstrate a hybrid lasing device composing of perovskite nanocrystals and silicon nitride nanobeam cavity. We fabricate SiN photonic crystal naonobeam cavities on a solid substrate with significantly improved thermal and mechanical stabilities compared to conventional suspended ones. In addition, adding a PMMA-encapsulation layer on top of the SiN can significantly boost the Q-factor of the cavity mode. By dispersing perovskite nanocrystals as emitters in the PMMA layer, we obtained high-performance coherent emissions in terms of lasing threshold, linewidth and mode volumes. Our work offers a compelling way of creating solution-processed active integrated photonic devices based on the mature platform of silicon photonics for applications in optical information science and photonic quantum technology.
format Preprint
id arxiv_https___arxiv_org_abs_2003_13546
institution arXiv
publishDate 2020
record_format arxiv
spellingShingle CMOS compatible high-performance nanolasing based on perovskite-SiN hybrid integration
He, Z.
Chen, B.
Hua, Y.
Liu, Z.
Wei, Y.
Liu, S.
Hu, A.
Shen, X.
Zhang, Y.
Gao, Y.
Liu, J.
Optics
Applied Physics
Coherent light sources in silicon photonics are the long-sought holy grail because silicon-based materials have indirect bandgap. Traditional strategies for realizing such sources, e.g., heterogeneous photonic integration, strain engineering and nonlinear process, are technologically demanding. Here, we demonstrate a hybrid lasing device composing of perovskite nanocrystals and silicon nitride nanobeam cavity. We fabricate SiN photonic crystal naonobeam cavities on a solid substrate with significantly improved thermal and mechanical stabilities compared to conventional suspended ones. In addition, adding a PMMA-encapsulation layer on top of the SiN can significantly boost the Q-factor of the cavity mode. By dispersing perovskite nanocrystals as emitters in the PMMA layer, we obtained high-performance coherent emissions in terms of lasing threshold, linewidth and mode volumes. Our work offers a compelling way of creating solution-processed active integrated photonic devices based on the mature platform of silicon photonics for applications in optical information science and photonic quantum technology.
title CMOS compatible high-performance nanolasing based on perovskite-SiN hybrid integration
topic Optics
Applied Physics
url https://arxiv.org/abs/2003.13546