Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography
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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
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2020
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| _version_ | 1866912935149830144 |
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| author | Yang, Dengyu Hao, Shan Chen, Jun Guo, Qing Yu, Muqing Hu, Yang Eom, KiTae Lee, Jung-Woo Eom, Chang-Beom Irvin, Patrick Levy, Jeremy |
| author_facet | Yang, Dengyu Hao, Shan Chen, Jun Guo, Qing Yu, Muqing Hu, Yang Eom, KiTae Lee, Jung-Woo Eom, Chang-Beom Irvin, Patrick Levy, Jeremy |
| contents | We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing technique is non-destructive and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2008_12906 |
| institution | arXiv |
| publishDate | 2020 |
| record_format | arxiv |
| spellingShingle | Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography Yang, Dengyu Hao, Shan Chen, Jun Guo, Qing Yu, Muqing Hu, Yang Eom, KiTae Lee, Jung-Woo Eom, Chang-Beom Irvin, Patrick Levy, Jeremy Mesoscale and Nanoscale Physics We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing technique is non-destructive and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods. |
| title | Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2008.12906 |