Progress in epitaxial thin-film Na3Bi as a topological electronic material
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arXiv
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2020
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| author | Di Bernardo, I. Hellerstedt, J. Liu, C. Akhgar, G. Wu, W. Yang, S. A. Culcer, D. Mo, S. -K. Adam, S. Edmonds, M. T. Fuhrer, M. S. |
| author_facet | Di Bernardo, I. Hellerstedt, J. Liu, C. Akhgar, G. Wu, W. Yang, S. A. Culcer, D. Mo, S. -K. Adam, S. Edmonds, M. T. Fuhrer, M. S. |
| contents | Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising topological electronic devices such as topological transistors.
In this review, an overview of the substantial progress achieved in the last few years on Na3Bi is presented, with a focus on technologically relevant large-area thin films synthesised via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semi-classical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field driven topological phase transitions, are addressed, with an outlook towards current challenges and expected future progress. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2009_00244 |
| institution | arXiv |
| publishDate | 2020 |
| record_format | arxiv |
| spellingShingle | Progress in epitaxial thin-film Na3Bi as a topological electronic material Di Bernardo, I. Hellerstedt, J. Liu, C. Akhgar, G. Wu, W. Yang, S. A. Culcer, D. Mo, S. -K. Adam, S. Edmonds, M. T. Fuhrer, M. S. Mesoscale and Nanoscale Physics Chemical Physics Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising topological electronic devices such as topological transistors. In this review, an overview of the substantial progress achieved in the last few years on Na3Bi is presented, with a focus on technologically relevant large-area thin films synthesised via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semi-classical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field driven topological phase transitions, are addressed, with an outlook towards current challenges and expected future progress. |
| title | Progress in epitaxial thin-film Na3Bi as a topological electronic material |
| topic | Mesoscale and Nanoscale Physics Chemical Physics |
| url | https://arxiv.org/abs/2009.00244 |