Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors

Fuente: arXiv
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Auteurs principaux: Niavol, Somayeh Saadat, Budde, Melanie, Papadogianni, Alexandra, Heilmann, Martin, Moghaddam, Hossain Milani, Aldao, Celso M., Ligorio, Giovanni, List-Kratochvil, Emil J. W., Lopes, Joao Marcelo J., Barsan, Nicolae, Bierwagen, Oliver, Schipani, Federico
Format: Preprint
Publié: 2020
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author Niavol, Somayeh Saadat
Budde, Melanie
Papadogianni, Alexandra
Heilmann, Martin
Moghaddam, Hossain Milani
Aldao, Celso M.
Ligorio, Giovanni
List-Kratochvil, Emil J. W.
Lopes, Joao Marcelo J.
Barsan, Nicolae
Bierwagen, Oliver
Schipani, Federico
author_facet Niavol, Somayeh Saadat
Budde, Melanie
Papadogianni, Alexandra
Heilmann, Martin
Moghaddam, Hossain Milani
Aldao, Celso M.
Ligorio, Giovanni
List-Kratochvil, Emil J. W.
Lopes, Joao Marcelo J.
Barsan, Nicolae
Bierwagen, Oliver
Schipani, Federico
contents Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the single layer graphene changed its response to p-type but did not reduce its sensitivity. We show that the conduction switch from n-type to p-type was not a consequence of an alteration of the graphene layer but is found to be an effect of the NiO layer. We find that the NiO leads to lowering of the Fermi level to a point that a crossing of the Dirac Point in the graphene switched the conduction type. These sensors were tested in the 100 ppb NO2 regime, showing good response and a detection limit extrapolated to be below 1 ppb. This new NiO/graphene/SiC configuration can be an attractive p-type sub-ppb sensor platform for NO2 and related gases.
format Preprint
id arxiv_https___arxiv_org_abs_2010_02914
institution arXiv
publishDate 2020
record_format arxiv
spellingShingle Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors
Niavol, Somayeh Saadat
Budde, Melanie
Papadogianni, Alexandra
Heilmann, Martin
Moghaddam, Hossain Milani
Aldao, Celso M.
Ligorio, Giovanni
List-Kratochvil, Emil J. W.
Lopes, Joao Marcelo J.
Barsan, Nicolae
Bierwagen, Oliver
Schipani, Federico
Materials Science
Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the single layer graphene changed its response to p-type but did not reduce its sensitivity. We show that the conduction switch from n-type to p-type was not a consequence of an alteration of the graphene layer but is found to be an effect of the NiO layer. We find that the NiO leads to lowering of the Fermi level to a point that a crossing of the Dirac Point in the graphene switched the conduction type. These sensors were tested in the 100 ppb NO2 regime, showing good response and a detection limit extrapolated to be below 1 ppb. This new NiO/graphene/SiC configuration can be an attractive p-type sub-ppb sensor platform for NO2 and related gases.
title Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors
topic Materials Science
url https://arxiv.org/abs/2010.02914